symbol v ds v gs i dm t j , t stg symbol ty p max 64 83 89 120 r jl 53 70 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 12 gate-source voltage drain-source voltage 30 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 5.5 30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.5 0.96 -55 to 150 t a =70c i d 7 AO8818 features v ds (v) = 30v i d = 7a (v gs = 10v) r ds(on) < 18m (v gs = 10v) r ds(on) < 20m (v gs = 4.5v) r ds(on) < 21m (v gs = 4v) r ds(on) < 24m (v gs = 3.1v) r ds(on) < 27m (v gs = 2.5v) r ds(on) < 58m (v gs = 1.8v) esd rating: 1500v hbm g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 1 2 3 4 8 7 6 5 tssop-8 top view g1 d1 s1 g2 d2 s2 the AO8818 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v while retaining a 12v v gs(max) rating. it is esd protected. this device is suitable for use as a uni-directional or bi- directional load switch, facilitated by its common-drain configuration. AO8818 is pb-free (meets rohs & sony 259 specifications). common-drain dual n-channel enhancement mode field effect transistor general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 10 a bv gso 12 v v gs(th) 0.6 0.94 1.5 v i d(on) 30 a 11.5 15 18 t j =125c 16 21 25 13 17 20 m 13.5 17.5 21 15 19.5 24 17 22 27 m 35 45 58 g fs 45 s v sd 0.74 1 v i s 2.5 a c iss 880 1060 pf c oss 130 pf c rss 90 pf r g 1.3 2 q g 11.6 14 nc q gs 1.9 nc q gd 4.6 nc t d(on) 8.7 ns t r 13.7 ns t d(off) 36 ns t f 11 ns t rr 16 20 ns q rr 7.7 nc body diode reverse recovery time body diode reverse recovery charge i f =7a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =7a reverse transfer capacitance i f =7a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v zero gate voltage drain current v ds =0v, v gs =10v gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m v gs =2.5v, i d =4a i s =1a,v gs =0v v ds =5v, i d =7a v gs =4.5v, i d =5a turn-on rise time turn-off delaytime v gs =5v, v ds =15v, r l =2.2 , r gen =3 gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =15v, i d =7a gate source charge turn-on delaytime dynamic parameters v gs =0v, v ds =15v, f=1mhz gate drain charge maximum body-diode continuous current input capacitance output capacitance gate-source breakdown voltage v ds =0v, i g =250ua v gs =4v, i d =5a v gs =3.1v, i d =5a v gs =1.8v, i d =3a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 2: feb 2008 www.freescale.net.cn 2 / 4
typical electrical and thermal characteristic s 0 10 20 30 012345 v ds (volts) figure 1: on-regions characteristi cs i d (a) v gs =2v v gs =2.5v 3.5v 10v 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds =5v 0 10 20 30 40 0 5 10 15 20 i d( a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ) v gs =4.5v v gs =2.5v v gs =10v 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalize on-resistance v gs =4.5v v gs =2.5v i d =5a i d =4a v gs =10v i d =7a 10 20 30 40 50 60 02468 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ) 25c 125c i d =7a 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c www.freescale.net.cn 3 / 4
typical electrical and thermal characteristic s 0 1 2 3 4 5 0 5 10 15 qg (nc) figure 7: gate-charge characteristics v gs (volt s) v ds =15v i d =7a 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf ) c iss c rss c oss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =150c t a =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance t on t p d d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =83c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 10 s www.freescale.net.cn 4 / 4
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